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| Product Datasheet August 15, 2000 19 - 27 GHz Medium Power Amplifier TGA1073G-SCC Key Features and Performance * * * * * 0.25 um pHEMT Technology 22 dB Nominal Gain 25 dBm Nominal Pout @ P1dB Bias 5-7V @ 220 mA Chip Dimensions 2.55 mm x 1.15mm Primary Applications The TriQuint TGA1073G-SCC is a three stage MPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA1073G is designed to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint communications. Gain and Return Loss (dB) * * 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 18 Point-to-Point Radio Point-to-Multipoint Communications The three stage design consists of a 200 um input device driving a 480um interstage device followed by an 800um output device. The TGA1073G provides 25dBm nominal output power at 1dB compression across 19-27GHz. Typical small signal gain is 22 dB. The TGA91073G requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. S21 S11 S22 19 20 21 22 23 24 25 Frequency (GHz) 26 27 28 28 24 20 P1dB (dBm) 16 12 8 4 0 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 rev 11/10/98 Product Datasheet August 15, 2000 MAXIMUM RATINGS SYMBOL V+ I + PARAMETER 5/ POSITIVE SUPPLY VOLTAGE POSSITIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 8V 296 mA 23 dBm 2.37 W 150 0C 320 C -65 to 150 0C 0 NOTES 1/ 4/ 2/ 3/ PIN PD T CH TM T STG 1/ 2/ 3/ 4/ 5/ Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. This value reflects an estimate. Actual value will be inserted as soon as it is determined. These ratings represent the maximum operable values for the device. DC SPECIFICATIONS (100%) (T A = 25 C + 5 C) NOTES SYMBOL IDSS3 GM3 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3| |VBVGD1| |VBVGS1| TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD 80 176 0.5 0.5 0.5 11 11 LIMITS MAX 376 424 1.5 1.5 1.5 30 30 mA mS V V V V V UNITS VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer). TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 rev 11/10/98 Product Datasheet August 15, 2000 RF SPECIFICATIONS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 220mA 19 GHz 20 - 25 GHz 20 GHz 22 GHz 23.5 GHz 19 - 25 GHz 19 - 25 GHz VALUE MIN 16 19 21 24 24 TYP 20 23 23 25 26 -20 -15 32 MAX dB dB dBm dBm dBm dB dB dBm UNITS 1/ SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION 1/ 1/ 2/ INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE OUTPUT THIRD ORDER INTERCEPT 1/ RF probe data is taken at 1 GHz steps. RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside of c/p) BIAS CONDITIONS VD (V) ID (mA) 6 220 PDISS (W) 1.32 RJC (C/W) 71.7 TCH (C) 149.6 TM (HRS) 1.0 E6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20mil CuMo Carrier at 55C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 rev 11/10/98 Product Datasheet August 15, 2000 Mechanical Characteristics TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 rev 11/10/98 Product Datasheet August 15, 2000 Chip Assembly and Bonding Diagram Vd .01uF 100pF 100pF 100pF 100pF .01uF Vg TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 rev 11/10/98 Product Datasheet August 15, 2000 Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 rev 11/10/98 |
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